IRF510 Data

DATA SHEET: IRF510 POWER MOSFET TRANSISTOR

Manufactured by Harris Semiconductors
Available at most Radio Shacks (although incorrectly labeled "IFR510")
Cost: $1.99 at Radio Shack (Cat. No. 276-2072)

DESCRIPTION.
The IRF510, IRF511, IRF512 and IRF513 are n-channel enhancement-mode
silicon-gate power field-effect transistors.  These power MOSFET's are
designed for applications such as switching regulators, motor drivers,
relay drivers, and drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power.  These types can be
driven directly from integrated circuits.

MAXIMUM RATINGS                 IRF510   IRF511   IRF512
--------------------------------------------------------------------
Vds   Drain-source voltage       100v      80v     100v
Vdgr  Drain-gate voltage         100v      80v     100v  Rgs=20K
Vgs   Gate-source voltage       +/-20v   +/-20v   +/-20v
Id    Continuous drain current   5.6A     5.6A     4.9A

ELECTRICAL CHARACTERISTICS      (All types unless otherwise stated)
--------------------------------------------------------------------
Igss   Gate-source leakage        500nA (forward)  -500nA (reverse)
Idss   Drain current, Vg=0v       250uA
Id-on  On state drain current     5.6A  IFR510, IFR511
                                 4.9A  IFR512, IFR513
Rds-on Drain-source "on" Res.     0.4-0.54 ohms  (device ON resistance)
Cis    Input capacitance          135pF   (at Vds=12v, Cis=180pF)
Cos    Output capacitance          80pF   (at Vds=12v, Cos=130pF)
Td-on  Turn-on delay time          8-11nS ) These parameters define
Tr     Rise time                  25-36nS ) how fast the MOSFET turns
Td-off Turn-off delay time        15-21nS ) on and off when gate is
Tf     Fall time                  12-21nS ) driven with a square wave

Vsd    Diode forward voltage      2.5v  (dropped across the source-drain
                                        due to the internal diode)

SOME DATA FROM THE PERFORMANCE CURVES

Output drain current (Id) vs. gate-source voltage (Vgs) at Vd=+12v
  Vgs=4v  Id= 0A
  Vgs=5v  Id= 1A
  Vgs=6v  Id= 2.8A
  Vgs=7v  Id= 4.8A
  Vgs=8v  Id= 6.8A

NOTE: Therefore, for a 5W QRP power amplifier, the gate-source voltage
     should not exceed 5-6v; otherwise excessive current will attempt
     to flow.  A continuous applied Vgs >7.5v will cause Id to
     exceed the maximum drain current rating of 5.6A (IRF510).  This
     will cause "catastrophic substrate failure" (commonly known
     as smoke!).

What is the maximum frequency?  Max. frequency is not specified, but
since Tr= 36nS (rise time) and Tf = 21nS (fall time), a total device
delay of 57nS occurs, worse case.  f=1/t = 1/57nS = 17.5 MHz.  Total
"typical" device delay is 25+12ns= 37nS for f= 27 MHz.  This does not
take into account L/C loading of the output filter, etc., which will
lower the maximum frequency which the MOSFET will toggle on and off.


PIN-OUT

    _______
    |  O  |
    |     | <--- Metal Flange (Drain)   ISOLATE FROM GROUND!!!
    -------
    | IRF |
    | 510 | <--- Plastic TO-220 case
    |     |
    |_____|
     I I I
     I I I  <--- Leads  (Max. temp = 300C for 10 seconds, max)
     I I I
    
     G D S


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GL de Paul NA5N   (1-97)