Friday, 5 February 2010

IRF510 Data

DATA SHEET: IRF510 POWER MOSFET TRANSISTOR

Manufactured by Harris Semiconductors
Available at most Radio Shacks (although incorrectly labeled "IFR510")
Cost: $1.99 at Radio Shack (Cat. No. 276-2072)

DESCRIPTION.
The IRF510, IRF511, IRF512 and IRF513 are n-channel enhancement-mode
silicon-gate power field-effect transistors. These power MOSFET's are
designed for applications such as switching regulators, motor drivers,
relay drivers, and drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types can be
driven directly from integrated circuits.

MAXIMUM RATINGS IRF510 IRF511 IRF512
--------------------------------------------------------------------
Vds Drain-source voltage 100v 80v 100v
Vdgr Drain-gate voltage 100v 80v 100v Rgs=20K
Vgs Gate-source voltage +/-20v +/-20v +/-20v
Id Continuous drain current 5.6A 5.6A 4.9A

ELECTRICAL CHARACTERISTICS (All types unless otherwise stated)
--------------------------------------------------------------------
Igss Gate-source leakage 500nA (forward) -500nA (reverse)
Idss Drain current, Vg=0v 250uA
Id-on On state drain current 5.6A IFR510, IFR511
4.9A IFR512, IFR513
Rds-on Drain-source "on" Res. 0.4-0.54 ohms (device ON resistance)
Cis Input capacitance 135pF (at Vds=12v, Cis=180pF)
Cos Output capacitance 80pF (at Vds=12v, Cos=130pF)
Td-on Turn-on delay time 8-11nS ) These parameters define
Tr Rise time 25-36nS ) how fast the MOSFET turns
Td-off Turn-off delay time 15-21nS ) on and off when gate is
Tf Fall time 12-21nS ) driven with a square wave

Vsd Diode forward voltage 2.5v (dropped across the source-drain
due to the internal diode)

SOME DATA FROM THE PERFORMANCE CURVES

Output drain current (Id) vs. gate-source voltage (Vgs) at Vd=+12v
Vgs=4v Id= 0A
Vgs=5v Id= 1A
Vgs=6v Id= 2.8A
Vgs=7v Id= 4.8A
Vgs=8v Id= 6.8A

NOTE: Therefore, for a 5W QRP power amplifier, the gate-source voltage
should not exceed 5-6v; otherwise excessive current will attempt
to flow. A continuous applied Vgs >7.5v will cause Id to
exceed the maximum drain current rating of 5.6A (IRF510). This
will cause "catastrophic substrate failure" (commonly known
as smoke!).

What is the maximum frequency? Max. frequency is not specified, but
since Tr= 36nS (rise time) and Tf = 21nS (fall time), a total device
delay of 57nS occurs, worse case. f=1/t = 1/57nS = 17.5 MHz. Total
"typical" device delay is 25+12ns= 37nS for f= 27 MHz. This does not
take into account L/C loading of the output filter, etc., which will
lower the maximum frequency which the MOSFET will toggle on and off.


PIN-OUT

_______
| O |
| | <--- Metal Flange (Drain) ISOLATE FROM GROUND!!!
-------
| IRF |
| 510 | <--- Plastic TO-220 case
| |
|_____|
I I I
I I I <--- Leads (Max. temp = 300C for 10 seconds, max)
I I I

G D S


-----------------------------------------------------------------
GL de Paul NA5N (1-97)

No comments: